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TK15A60D(STA4,Q,M)

Part No TK15A60D(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 15A TO-220SIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 370 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 1050270-TK15A60D(STA4,Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK15A60D(STA4,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage TK15A60D(STA4,Q,M) is an active N-channel MOSFET electronic component.

  • Maximum Power Dissipation: 50W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 15A (Ta) @ 25°C
  • Status: balanced supply and demand status
  • TK15A60D(STA4,Q,M) is a reliable electronic component that is designed to meet the needs of: engineers who require high-quality electronic components
  • Suitable for use in: a wide range of applications that require a high level of performance and reliability

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5131 $60.5240
95+ $1.2416 $117.9520
145+ $1.2035 $174.5075
200+ $1.1642 $232.8400
260+ $1.1250 $292.5000
345+ $1.0095 $348.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,100 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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