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TK15A60D

Part No TK15A60D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 15A TO-220SIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 370 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 091187-TK15A60D
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK15A60D CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a N-channel power transistor with a drain-source breakdown voltage of 600V.

  • Drain-Source Breakdown Voltage: 600V
  • Maximum Power Dissipation: 50W
  • Continuous Drain Current: 15A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Input Capacitance: 2600pF @ 25V
  • Maximum Rds on @ Id, Vgs: 370 mOhm @ 7.5A, 10V
  • Mounting: through-hole mounted
  • Package: TO-220SIS case
  • Category: Discrete Semiconductor Products
  • Popularity: high

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 122,400 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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