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Same model may have multiple batches, images only for reference.
TK16A55D(STA4,Q,M) Real Image
Same model may have multiple batches, images only for reference.

TK16A55D(STA4,Q,M)

Part No TK16A55D(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 16A TO-220SIS
Datasheet
TK16A55D(STA4,Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 16A (Ta)
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2600pF @ 25V
Maximum Rds On at Id,Vgs 330 mOhm @ 8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 1050274-TK16A55D(STA4,Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK16A55D(STA4,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage TK16A55D(STA4,Q,M) is an N-channel MOSFET that is used in a wide range of electronic circuits.

  • Drain-Source Breakdown Voltage: 550V
  • Continuous Drain Current @ 25°C: 16A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Max Gate Charge: 45nC @ 10V
  • Maximum Input Capacitance: 2600pF @ 25V
  • Maximum Rds On @ Id,Vgs: 330 mOhm @ 8A, 10V
  • Mounting: Through-Hole
  • Dimension: TO-220-3 Full Pack
  • Temperature Range: 150°C (TJ)
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9988 $59.9280
145+ $0.8195 $118.8275
220+ $0.7939 $174.6580
305+ $0.7683 $234.3315
390+ $0.7427 $289.6530
525+ $0.6659 $349.5975
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Availability: 6,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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