The Toshiba TK17A80W is an N-channel power MOSFET designed for high-voltage, high-efficiency switching applications. This MOSFET offers a good balance of low on-resistance and fast switching characteristics, contributing to reduced power losses and enhanced system efficiency.
Applications:
- Switch-Mode Power Supplies (SMPS): Used for efficient power conversion in various power supply designs.
- Power Factor Correction (PFC): Employed in PFC circuits to improve power quality and reduce harmonic distortion.
- Inverters: Utilized in DC-AC inverters for applications such as solar power systems and uninterruptible power supplies (UPS).
- Motor Control: Implemented in motor drives for industrial and consumer applications.
- Lighting: Suitable for electronic ballasts and LED lighting systems.
Features:
- N-Channel MOSFET: Provides fast switching speeds and efficient operation.
- 800V Drain-Source Voltage: Suitable for high-voltage applications.
- Low On-Resistance (RDS(on)): Reduces conduction losses, improving efficiency.
- Fast Switching Speed: Minimizes switching losses, further enhancing efficiency.
- Avalanche Capability: Provides ruggedness and protection against voltage transients.
- RoHS Compliant: Compliant with environmental regulations restricting hazardous substances.
Benefits:
- High Efficiency: Low on-resistance and fast switching speed result in minimal power losses.
- Reliable Operation: Rugged design ensures stable and dependable performance in demanding applications.
- Reduced Heat Dissipation: Lower power losses lead to less heat generation.
- Simplified Design: Easy to integrate into a variety of power electronic circuits.
- Improved System Performance: Contributes to the overall efficiency and reliability of the power system.
Additional Details:
The Toshiba TK17A80W features a drain current (ID) rating of 17A. It has a gate-source voltage (VGS) rating typically around ±30V. The device is typically packaged in a TO-220 or similar through-hole package, making it easy to mount and heatsink. The operating temperature range is generally between -55°C and +150°C. This MOSFET's combination of high voltage rating, low on-resistance, and fast switching speed makes it a suitable choice for applications that demand high efficiency and reliable performance.