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Same model may have multiple batches, images only for reference.
TK18A50D(Q,M)
Same model may have multiple batches, images only for reference.

TK18A50D(Q,M)

Part No TK18A50D(Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 500V 18A 3-Pin(3+Tab) TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SC
Continuous Drain Current (ID) 18 A
Drain to Source Resistance 230 mΩ
Drain to Source Voltage (Vdss) 500 V
Gate to Source Voltage (Vgs) 30 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 50 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 50 W
REACH SVHC No SVHC
RoHS Compliant
Threshold Voltage 2 V
Win Source Part Number 1007883-TK18A50D(Q,M)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK18A50D(Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage TK18A50D(Q,M) is a MOSFET transistor.

  • Drain to Source Voltage: 500 V
  • Power Dissipation: 50 W
  • Continuous Drain Current: 18 A
  • Mounting Style: Through-Hole
  • RoHS: RoHS compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0839 $54.1950
100+ $1.0140 $101.4000
155+ $0.9791 $151.7605
220+ $0.9091 $200.0020
290+ $0.8742 $253.5180
360+ $0.8392 $302.1120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,170 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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