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Same model may have multiple batches, images only for reference.
TK20A60U(Q) Real Image
Same model may have multiple batches, images only for reference.

TK20A60U(Q)

Part No TK20A60U(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SC
Continuous Drain Current (ID) 20 A
Drain to Source Breakdown Voltage 600 V
Drain to Source Resistance 190 mΩ
Drain to Source Voltage (Vdss) 600 V
Element Configuration Single
Fall Time 100 ns
Gate to Source Voltage (Vgs) 30 V
Lead Free Yes
Maximum Operating Temperature 150 °C
Max Power Dissipation 45 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 45 W
Radiation Hardening No
REACH SVHC Unknown
Rise Time 80 ns
RoHS Compliant
Threshold Voltage 3 V
Turn-Off Delay Time 12 ns
Win Source Part Number 966743-TK20A60U(Q)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK20A60U(Q) CAD Model

Description

The Toshiba Semiconductor and Storage 966743-TK20A60U(Q) is a MOSFET transistor with a drain to source voltage of 600 V and a power dissipation of 45 W.

  • Rise Time: 80 ns
  • Fall Time: 100 ns
  • Element: Single
  • Pins: 3
  • Mounting: Through Hole
  • Drain to Source Resistance: 190 mΩ
  • Gate to Source Voltage: 30 V
  • Threshold Voltage: 3 V
  • Operating Temperature Range: -55 °C to 150 °C
  • RoHS Compliant: Yes
  • Lead-Free: Yes

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