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TK22A65X5,S5X

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Part No	TK22A65X5,S5X
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	X35 PB-F POWER MOSFET TRANSISTOR / N-Channel 650 V 22A (Ta) 45W (Tc) Through Hole TO-220SIS
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Toshiba Semiconductor and Storage
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	22A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	160mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2400 pF @ 300 V
Power Dissipation (Max)	45W (Tc)
Temperature Range - Operating	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK22A65
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	264-TK22A65X5S5X,TK22A65X5,S5X(M
Standard Package	50
Win Source Part Number	1214795-TK22A65X5,S5X
Ultra Librarian 3D Model	Ultra Librarian TK22A65X5,S5X CAD Model

Alternative Products

Description

The Toshiba Semiconductor and Storage TK22A65X5,S5X is a discrete semiconductor product that falls the category of Transistors - FETs, MOSFETs - Single.

Type: N-Channel MOSFET (Metal Oxide)
Maximum Drain to Source Voltage: 650 V
Continuous Drain Current: 22A (Ta) @ 25°C
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Mounting Type: Through Hole
Package/Case: TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V

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