The TK28N65W5, also designated as TK28N65W, is a high-voltage N-channel power MOSFET from Toshiba Semiconductor and Storage, built using their advanced π-MOS VII process. This MOSFET is optimized for high-efficiency and high-power applications.

Applications:

• Switching power supplies (SMPS)
• Power factor correction (PFC) circuits
• Uninterruptible power supplies (UPS)
• Motor control
• Lighting systems

Features:

• High voltage rating (650V)
• Low on-resistance (RDS(on))
• Fast switching speed
• Low gate charge (Qg)
• Built-in gate resistor
• RoHS compliant

Benefits:

• Improved efficiency due to reduced conduction and switching losses.
• Higher power density in power supply designs.
• Simplified design due to the integrated gate resistor.
• Reduced EMI due to optimized switching characteristics.
• Increased system reliability due to the robust design.

Additional Details:

The TK28N65W5 / TK28N65W boasts a drain-source voltage (VDS) of 650V, making it suitable for high-voltage applications. It has a continuous drain current (ID) rating that depends on the package and operating conditions. The low on-resistance (RDS(on)) minimizes conduction losses, while the fast switching speed reduces switching losses. The low gate charge (Qg) simplifies gate drive circuitry and improves efficiency. The built-in gate resistor helps to dampen ringing and reduce EMI. The device is typically available in a TO-220 or TO-247 package for easy mounting and heat sinking. Its key features contribute to high efficiency, reliability, and ease of use in various power electronic applications.