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Same model may have multiple batches, images only for reference.
TK30A06N1,S4X
Same model may have multiple batches, images only for reference.

TK30A06N1,S4X

Part No TK30A06N1,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A TO220SIS / N-Channel 60 V 30A (Tc) 25W (Tc) Through Hole TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1050 pF @ 30 V
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220SIS
Case / Package TO-220-3 Full Pack
Base Product Number TK30A06
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number TK30A06N1S4X,TK30A06N1,S4X(S,TK30A06N1,S4X-ND
Standard Package 50
Win Source Part Number 1324438-TK30A06N1,S4X
Ultra Librarian 3D Model Ultra Librarian TK30A06N1,S4X CAD Model

Description

The TK30A06N1,S4X is an N-channel MOSFET transistor that is designed for discrete semiconductor products.

  • Mounting Type: Through-hole
  • Package / Case Size: TO-220-3 Full Pack
  • Supplier Device Package: TO-220SIS
  • Drain to Source Voltage (Vdss): 60 V
  • Current Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 200µA
  • Power Dissipation (Max): 25W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
  • Vgs (Max): ±20V
  • Temperature Range: 150°C (TJ)
  • Manufacturer: Toshiba Semiconductor and Storage

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