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Same model may have multiple batches, images only for reference.
TK30E06N1 Real Image
Same model may have multiple batches, images only for reference.

TK30E06N1

Part No TK30E06N1
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 43A TO-220
Datasheet
TK30E06N1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 43A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 200μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 1050pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 53W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 15A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 043102-TK30E06N1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK30E06N1 CAD Model

Description

The Toshiba Semiconductor and Storage TK30E06N1 is a MOSFET with an N-Channel polarity and a TO-220 case/package.

  • Power Dissipation: 53W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current at 25°C: 43A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 200μA
  • Maximum Gate Charge: 16nC @ 10V
  • Maximum Input Capacitance: 1050pF @ 30V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 15 mOhm @ 15A, 10V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.1813 $62.1756
28+ $4.2516 $119.0448
43+ $4.1187 $177.1041
58+ $3.9859 $231.1822
75+ $3.8531 $288.9825
101+ $3.4546 $348.9146
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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