The TK31N60W5 is a 600V, 31A N-channel power MOSFET from Toshiba Semiconductor and Storage. It features a low on-resistance and is designed for efficient power switching. This MOSFET is part of Toshiba’s power MOSFET family and comes in a TO-247 package.

Applications

• Power factor correction (PFC) circuits
• Switch-mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Motor control circuits
• DC-DC converters
• Lighting ballasts

Features

• V<sub>DSS: 600V
• I<sub>D: 31A
• R<sub>DS(on) (Max): 0.115 Ω @ V<sub>GS = 10V
• Low gate charge
• High avalanche capability
• Fast switching speed
• TO-247 package

Benefits

• High Efficiency: Reduced on-resistance minimizes conduction losses, increasing overall system efficiency.
• Improved Thermal Performance: The TO-247 package enhances heat dissipation, allowing for operation at higher power levels.
• Reliable Operation: Robust avalanche capability ensures stable performance under transient conditions.
• Simplified Design: Fast switching characteristics simplify circuit design and reduce the need for complex gate drive circuitry.
• Cost-Effective: Provides a balance of performance and cost for a wide range of power applications.

Technical Specifications

The TK31N60W5 has a drain-source voltage (V<sub>DSS) rating of 600V and a continuous drain current (I<sub>D) rating of 31A. The maximum on-resistance (R<sub>DS(on)) is 0.115 Ω at a gate-source voltage (V<sub>GS) of 10V. Gate charge (Q<sub>g) is relatively low, contributing to fast switching. The MOSFET's operating temperature range is typically -55°C to +150°C. The package is a standard TO-247, facilitating easy mounting and heat sinking. Check the datasheet for specific pulse current and power dissipation values.