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TK31V60X,LQ

Part No TK31V60X,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 30.8A 4DFN / N-Channel 600 V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30.8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 98mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
FET Feature Super Junction
Power Dissipation (Max) 240W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Surface Mount
Supplier Device Package 4-DFN-EP (8x8)
Case / Package 4-VSFN Exposed Pad
Base Product Number TK31V60
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number TK31V60X,LQ(S,TK31V60XLQDKR,TK31V60XLQCT,TK31V60XLQTR
Standard Package 2,500
Win Source Part Number 1325314-TK31V60X,LQ
Ultra Librarian 3D Model Ultra Librarian TK31V60X,LQ CAD Model

Description

The TK31V60X,LQ is a MOSFET transistor manufactured by Toshiba Semiconductor and Storage. This N-channel transistor features a super junction and has a drain to source voltage (Vdss) of 600V.

  • Continuous Drain Current (Id): 30.8A @ 25°C
  • On-Resistance (Rds On): 98mOhm @ 9.4A and 10V
  • Gate Threshold Voltage (Vgs(th)): 3.5V @ 1.5mA
  • Gate Charge (Qg): 65 nC @ 10V
  • Input Capacitance (Ciss): 3000 pF @ 300V
  • Maximum Voltage: ±30V
  • Mounting: Surface-Mount
  • Power Dissipation: 240W (Tc)
  • Package: 4-DFN-EP (8x8)
  • Operating Temperature Range: 150°C
  • ROHS3 Compliant: Yes

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