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Same model may have multiple batches, images only for reference.
TK32A12N1,S4X
Same model may have multiple batches, images only for reference.

TK32A12N1,S4X

Part No TK32A12N1,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 120V 32A TO220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 60 V
Power Dissipation (Max) 30W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Case / Package TO-220-3 Full Pack
Package Tube
Supply and Demand Status Shortage
Win Source Part Number 1495180-TK32A12N1,S4X
Ultra Librarian 3D Model Ultra Librarian TK32A12N1,S4X CAD Model

Description

N

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