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Same model may have multiple batches, images only for reference.
RN2909FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2909FE(TE85L,F)

Part No RN2909FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ES6
Datasheet
RN2909FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 115013-RN2909FE(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2909FE(TE85L,F) CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage, and its Win Source Part Number is 115013-RN2909FE(TE85L,F).

  • Product Type: Discrete Semiconductor Product
  • Status: Active
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Frequency-transition: 200MHz
  • Transistor Polarity: 2 PNP - Pre-Biased (Dual)
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW
  • Supply and Demand Status: Balanced

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Quantity Unit Price Ext. Price
45+ $1.4160 $63.7200
100+ $1.1619 $116.1900
155+ $1.1261 $174.5455
215+ $1.0892 $234.1780
275+ $1.0534 $289.6850
370+ $0.9448 $349.5760
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