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Same model may have multiple batches, images only for reference.
RN4603(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4603(TE85L,F)

Part No RN4603(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.3W SM6
Datasheet
RN4603(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz, 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SM6
Win Source Part Number 027454-RN4603(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4603(TE85L,F) CAD Model

Description

The RN4603(TE85L,F) is a pre-biased NPN and PNP dual transistor manufactured by Toshiba Semiconductor and Storage.

  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Transition Frequency: 200MHz and 250MHz
  • Typical Gain: 70 @ 10mA and 5V
  • Maximum Power Dissipation: 300mW
  • Collector Cut-Off Current: 100nA (ICBO)
  • Package: SM6
  • Mounting: SMD (SMT) board
  • Vce (sat): 300mV @ 250μA and 5mA
  • Application: Discrete semiconductor products

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