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Same model may have multiple batches, images only for reference.
RN4989FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4989FE(TE85L,F)

Part No RN4989FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
RN4989FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Style SMD/SMT
Package SOT-563, SOT-666
Manufacturer Device Package ES6
Win Source Part Number 098320-RN4989FE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4989FE(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage 098320-RN4989FE(TE85L,F) is a pre-biased dual NPN and PNP transistor array.

  • Maximum Power: 100mW
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Transistor Type: 1 NPN and 1 PNP
  • Device Package: ES6
  • Mounting Style: SMD/SMT
  • Package Options: SOT-563 and SOT-666
  • Current Cutoff Maximum (ICBO): 100nA
  • Minimum DC Current Gain (hFE): 70 @ 10mA and 5V
  • Frequency Transition: 250MHz
  • Resistors: base and emitter base resistors of 47k and 22k ohms, respectively
  • Ideal Use: various electronic applications

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