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Same model may have multiple batches, images only for reference.
TK35N65W5,S1F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK35N65W5,S1F

Part No TK35N65W5,S1F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 35A TO-247
Datasheet
TK35N65W5,S1F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 2.1mA
Max Gate Charge 115nC @ 10V
Max Input Capacitance 4100pF @ 300V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 270W (Tc)
Maximum Rds On at Id,Vgs 95 mOhm @ 17.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 1050490-TK35N65W5,S1F
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK35N65W5,S1F CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-performance and reliable electronic component that is designed to meet the requirements of various applications in the field of electronic devices.

  • Power Dissipation: 270W
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 35A
  • Gate-Source Threshold Voltage: 4.5V @ 2.1mA
  • Maximum Rds On @ Id, Vgs: 95 mOhm @ 17.5A, 10V
  • Drive Voltage: 10V
  • Maximum Gate-Source Voltage: ±30V

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Quantity Unit Price Ext. Price
13+ $4.7066 $61.1858
30+ $3.8623 $115.8690
47+ $3.7410 $175.8270
64+ $3.6209 $231.7376
83+ $3.4997 $290.4751
111+ $3.1381 $348.3291
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Availability: 12,000 pieces
MOQ: 13 pcs
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