The Toshiba Semiconductor and Storage MOSFET is a high-performance electronic component designed for use in various applications.

• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current at 25°C: 38.8A
• Polarity: N-Channel MOSFET
• Power Dissipation: up to 270W (Tc)
• FET Feature: super junction technology
• Maximum Rds On: 65 mOhm @ Id,Vgs of 19.4A, 10V
• Maximum Gate-Source Voltage: ±30V
• Gate-Source Threshold Voltage: 3.7V @ 1.9mA
• Input Capacitance: 4100pF @ 300V
• Max Gate Charge: 135nC @ 10V
• Package: TO-3P(N)
• Mounting: through hole
• Suitable for: use in discrete semiconductor products