The TK39N60W is a 600V, 39A N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. It is designed for high-efficiency power switching applications. This MOSFET utilizes advanced process technology to achieve low on-resistance and fast switching speeds.

Applications

• Power supplies: Switch-mode power supplies (SMPS), server power supplies, and adapters.
• Motor drives: Controlling motors in industrial equipment and appliances.
• Inverters: Solar inverters, UPS systems, and welding inverters.
• Lighting: Electronic ballasts and LED lighting.
• Power factor correction (PFC): Improving power quality and efficiency.

Features

• 600V drain-source voltage: Suitable for high-voltage applications.
• 39A continuous drain current: Capable of handling high current loads.
• Low on-resistance (RDS(on)): Minimizes power dissipation and improves efficiency.
• Fast switching speed: Reduces switching losses and improves efficiency.
• Avalanche rated: Withstands avalanche breakdown conditions.
• RoHS compliant: Adheres to environmental regulations.

Benefits

• High efficiency: Low on-resistance and fast switching speeds minimize power losses.
• Increased power density: Allows for smaller and more compact power supply designs.
• Improved reliability: Avalanche rating provides robustness against voltage transients.
• Simplified circuit design: The MOSFET can be easily integrated into various power electronics circuits.
• Reduced heat sink size: Lower power dissipation reduces the need for large heat sinks.

Additional Details

The TK39N60W comes in a TO-247 package. The gate threshold voltage is typically around 3V. The total gate charge is typically around 40 nC. The operating temperature range is typically -55°C to +150°C. It is commonly used in bridge rectifiers, half-bridge converters, and full-bridge converters.