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Same model may have multiple batches, images only for reference.
TK40E10K3 Real Image
Same model may have multiple batches, images only for reference.

TK40E10K3

Part No TK40E10K3
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 40A TO-220AB
Datasheet
TK40E10K3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 40A (Ta)
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 4000pF @ 10V
Maximum Rds On at Id,Vgs 15 mOhm @ 20A, 10V
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 367097-TK40E10K3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK40E10K3 CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and has a Win Source Part Number of 367097-TK40E10K3.

  • Category: Discrete Semiconductor Products
  • Technology: MOSFET
  • Supply and Demand Status: balanced
  • Packaging: Tube/Rail
  • Mounting: Through Hole
  • Polarity: N-Channel
  • Case/Package: TO-220-3
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current at 25°C: 40A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Max Gate Charge: 84nC @ 10V
  • Max Input Capacitance: 4000pF @ 10V
  • Maximum Rds On at Id,Vgs: 15 mOhm @ 20A, 10V

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