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TK40E10N1,S1X(S

Part No TK40E10N1,S1X(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1144+
Reference case TO-220
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 742582-TK40E10N1,S1X(S
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK40E10N1,S1X(S CAD Model

Description

The TK40E10N1,S1X(S) is a high-performance N-channel power MOSFET from Toshiba Semiconductor and Storage, designed for use in a wide range of power switching applications. This MOSFET is engineered to provide efficient and reliable operation in circuits such as power supplies, motor control, and DC-DC converters. Its key features include low on-resistance and fast switching speeds, which contribute to reduced power losses and improved overall system efficiency.

Applications

  • Switching Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Circuits
  • Uninterruptible Power Supplies (UPS)
  • Inverters
  • Solid State Relays (SSR)

Features

  • Low drain-source on-resistance (RDS(on)) for minimal conduction losses
  • High-speed switching performance to reduce switching losses
  • Low gate charge (Qg) for efficient gate drive
  • High avalanche energy rating for robust operation
  • Trench gate structure for enhanced performance
  • RoHS compliant, ensuring environmental responsibility
  • Available in a surface-mount package for compact designs

Benefits

  • Improved energy efficiency in power conversion systems
  • Reduced heat generation for enhanced system reliability
  • Simplified thermal management due to lower power dissipation
  • Optimized for high-frequency switching applications
  • Increased system power density
  • Environmentally friendly due to RoHS compliance
  • Suitable for compact and space-constrained applications

Additional Details

The TK40E10N1,S1X(S) power MOSFET is designed with a trench gate structure, which allows for lower on-resistance and faster switching speeds compared to traditional planar MOSFETs. This results in reduced conduction and switching losses, leading to higher overall efficiency in power conversion applications. The device also features a low gate charge, which simplifies the gate drive requirements and further enhances efficiency. Its high avalanche energy rating ensures robust operation and protection against voltage transients.

This MOSFET is well-suited for a variety of power switching applications, including switching mode power supplies, DC-DC converters, and motor control circuits. Its low on-resistance, fast switching speeds, and robust design make it an excellent choice for engineers seeking to improve the efficiency and reliability of their power electronic systems. The surface-mount package also allows for compact designs, making it suitable for space-constrained applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1217 $63.6510
70+ $1.7417 $121.9190
105+ $1.6875 $177.1875
145+ $1.6320 $236.6400
185+ $1.5777 $291.8745
245+ $1.4149 $346.6505
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 63,100 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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