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Same model may have multiple batches, images only for reference.
TK40E10N1,S1X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK40E10N1,S1X

Part No TK40E10N1,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 100V 90A TO220
Datasheet
TK40E10N1,S1X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 500μA
Max Gate Charge 49nC @ 10V
Max Input Capacitance 3000pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 126W (Tc)
Maximum Rds On at Id,Vgs 8.2 mOhm @ 20A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 212889-TK40E10N1,S1X
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK40E10N1,S1X CAD Model

Description

The TK40E10N1,S1X MOSFET from Toshiba Semiconductor and Storage is an N-channel, through-hole mounting technology component that is commonly used in various discrete semiconductor products.

  • Case/Package: TO-220
  • Dimension: TO-220-3
  • Power Dissipation: 126W (Tc)
  • Continuous Drain Current: up to 90A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 500μA
  • Maximum Gate-Source Voltage: ±20V
  • Popularity: medium
  • Supply and demand status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1217 $63.6510
70+ $1.7417 $121.9190
105+ $1.6875 $177.1875
145+ $1.6320 $236.6400
185+ $1.5777 $291.8745
245+ $1.4149 $346.6505
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 92,600 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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