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TK4A53D

Part No TK4A53D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 525V 4A TO-220SIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 525V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 490pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 1.7 Ohm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 212894-TK4A53D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK4A53D CAD Model

Description

The TK4A53D is an N-channel MOSFET transistor manufactured by Toshiba Semiconductor and Storage.

  • It has a Win Source Part Number of 212894-TK4A53D and is packaged in a TO-220SIS case/package.
  • The transistor has a maximum power dissipation of 35W and a continuous drain current of 4A @ 25°C.
  • It has a gate-source threshold voltage of 4.4V @ 1mA and a maximum gate charge of 11nC @ 10V.
  • The transistor has a maximum Rds On @ Id, Vgs of 1.7 Ohm @ 2A, 10V.
  • It is suitable for use in various electronic devices that require N-channel MOSFET transistor functionality.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $8.0469 $64.3752
18+ $6.6020 $118.8360
28+ $6.3964 $179.0992
38+ $6.1896 $235.2048
49+ $5.9841 $293.2209
65+ $5.3650 $348.7250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,500 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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