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TK4P55DA(T6RSS-Q)

Part No TK4P55DA(T6RSS-Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 3.5A DPAK-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 9nC @ 10V
Max Input Capacitance 380pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 2.45 Ohm @ 1.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1107444-TK4P55DA(T6RSS-Q)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK4P55DA(T6RSS-Q) CAD Model

Description

The 1107444-TK4P55DA(T6RSS-Q) is an active electronic component that is a reliable option for your electronic needs from Toshiba Semiconductor and Storage.

  • Supply and Demand Status: sufficient
  • Technology: MOSFET
  • Power Dissipation: 80W (Tc)
  • Drain-Source Breakdown Voltage: 550V
  • Maximum Rds On: 2.45 Ohm @ 1.8A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Contact us for: more technical support and information regarding this product.

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,900 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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