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Same model may have multiple batches, images only for reference.
TK4P60DB(T6RDV,Q,S)
Same model may have multiple batches, images only for reference.

TK4P60DB(T6RDV,Q,S)

Part No TK4P60DB(T6RDV,Q,S)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Field Effect Transistor Silicon N Channel MOS Type
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package DPAK
Continuous Drain Current (ID) 3.7 A
Fall Time 8 ns
Gate to Source Voltage (Vgs) 30 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Power Dissipation 80 W
Radiation Hardening No
Rise Time 18 ns
RoHS Compliant
Win Source Part Number 1099459-TK4P60DB(T6RDV,Q,S)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK4P60DB(T6RDV,Q,S) CAD Model

Description

The TK4P60DB(T6RDV,Q,S) manufactured by Toshiba Semiconductor and Storage is a transistor-FET, MOSFET-RF electronic component.

  • Supply and Demand Status: Limited
  • Popularity: Low
  • Authenticity: Recommended to purchase from authorized distributors
  • Maximum Operating Temperature: 150°C
  • Minimum Operating Temperature: -55°C
  • Continuous Drain Current (ID): 3.7A
  • Gate to Source Voltage (Vgs): 30V

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