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Same model may have multiple batches, images only for reference.
TK58E06N1,S1X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK58E06N1,S1X

Part No TK58E06N1,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 58A TO-220
Datasheet
TK58E06N1,S1X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 58A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 500μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 3400pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 5.4 mOhm @ 29A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 212902-TK58E06N1,S1X
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK58E06N1,S1X CAD Model

Description

The Toshiba Semiconductor and Storage TK58E06N1,S1X is a commonly used N-channel MOSFET in various electronic devices.

  • It has a maximum power dissipation of 110W and a drain-source breakdown voltage of 60V.
  • The drive voltage for this MOSFET is 10V, and it has a maximum Rds On of 5.4 mOhm @ 29A and 10V.
  • The maximum gate-source voltage is ±20V, and the maximum gate charge is 46nC @ 10V.

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