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Same model may have multiple batches, images only for reference.
TK5A60W,S4VX Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK5A60W,S4VX

Part No TK5A60W,S4VX
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 5.4A TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 270μA
Max Gate Charge 10.5nC @ 10V
Max Input Capacitance 380pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 2.7A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1050551-TK5A60W,S4VX
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian TK5A60W,S4VX CAD Model

Description

The TK5A60W,S4VX is a MOSFET technology component with a super junction FET feature.

  • Polarity: N-Channel
  • Power Dissipation: 30W (Tc)
  • Case/Package: TO-220SIS
  • Dimension: TO-220-3 Full Pack, Isolated Tab
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 5.4A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 3.7V @ 270μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id, Vgs: 900 mOhm @ 2.7A, 10V
  • Product Category: Discrete Semiconductor Products
  • Packaging: Tube/Rail
  • Supply and Demand Status: Balanced
  • Quantity per Package: 50

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