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TK5P50D(T6RSS-Q)

Part No TK5P50D(T6RSS-Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5A DPAK-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 490pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 2.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 212908-TK5P50D(T6RSS-Q)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK5P50D(T6RSS-Q) CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-performance N-channel transistor that is designed to operate at a maximum power dissipation of 80W (Tc).

  • Maximum Power Dissipation: 80W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 5A (Ta)
  • Gate-Source Threshold Voltage: 4.4V @ 1mA
  • Maximum Gate Charge: 11nC @ 10V
  • Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Status: Active
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
300+ $0.1952 $58.5600
720+ $0.1605 $115.5600
1,115+ $0.1559 $173.8285
1,540+ $0.1502 $231.3080
1,985+ $0.1455 $288.8175
2,655+ $0.1305 $346.4775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 300 pcs
Order Increment : 1 pcs
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