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TK5P60V,RVQ(S

Part No TK5P60V,RVQ(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOS Power Transistors HV (>= 200V)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 965270-TK5P60V,RVQ(S
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK5P60V,RVQ(S CAD Model

Description

The TK5P60V,RVQ(S is a 600V N-channel Power MOSFET manufactured by Toshiba Semiconductor and Storage. This MOSFET is designed for high-voltage, high-speed switching applications, offering low on-resistance and fast switching characteristics.

Applications

  • Switching Power Supplies
  • Power Factor Correction (PFC) circuits
  • DC-DC Converters
  • Motor control
  • Lighting ballasts

Features

  • VDSS: 600V
  • ID: 5A
  • RDS(on): 1.65Ω (max) @ VGS=10V
  • Low gate charge
  • Fast switching speed
  • Avalanche rated
  • RoHS compliant

Benefits

  • High efficiency in power conversion applications due to low RDS(on).
  • Reduced switching losses due to fast switching speed.
  • Improved system reliability due to avalanche rating.
  • Simplified thermal management due to low RDS(on).
  • Suitable for a wide range of high-voltage power applications.

Additional Details

The TK5P60V,RVQ(S) is an N-channel enhancement mode MOSFET. It comes in a through-hole package, allowing for easy mounting and heatsinking. The low gate charge minimizes driving power requirements, simplifying the gate drive circuitry. The avalanche rating ensures that the MOSFET can withstand transient voltage spikes. It's suitable for high-frequency operation. The datasheet specifies various parameters such as gate threshold voltage, input capacitance, and output capacitance. This Power MOSFET aims to provide efficient and reliable switching in power electronic designs. The device is designed for use in a variety of environments.

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