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TK5Q60W

Part No TK5Q60W
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Switching Voltage Regulators
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1267759-TK5Q60W
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK5Q60W CAD Model

Description

The TK5Q60W is a 600V, 5A N-channel Power MOSFET from Toshiba Semiconductor and Storage. Power MOSFETs are used as electronic switches in a variety of applications, offering efficient control of electrical power.

Applications:

  • Power Supplies: In switched-mode power supplies (SMPS) and AC-DC converters.
  • Motor Control: Controlling the speed and direction of electric motors.
  • DC-DC Converters: Converting DC voltage levels efficiently.
  • Lighting Ballasts: In electronic ballasts for fluorescent and LED lighting.
  • Inverters: Converting DC power to AC power.

Features:

  • N-Channel MOSFET: N-channel enhancement mode MOSFET.
  • 600V Drain-Source Voltage (VDS): High voltage rating for high-voltage applications.
  • 5A Continuous Drain Current (ID): Can handle a continuous drain current of 5 Amperes.
  • Low On-Resistance (RDS(on)): Low resistance when the MOSFET is switched on, reducing power dissipation.
  • Avalanche Rated: Can withstand avalanche breakdown.
  • Fast Switching Speed: Provides fast switching speeds.
  • Lead-Free Package: Available in a lead-free package.

Benefits:

  • High Efficiency: Low on-resistance minimizes power dissipation and improves efficiency.
  • High Voltage Capability: 600V rating allows for use in high-voltage applications.
  • Robust Design: Avalanche rating enhances reliability.
  • Easy to Use: Simple to drive with a gate voltage.
  • Environmentally Friendly: Lead-free package.

Additional Details:

The TK5Q60W's on-resistance (RDS(on)) is a critical parameter, as it directly affects the power dissipation of the MOSFET. Lower RDS(on) values result in lower power losses and higher efficiency. The gate threshold voltage (VGS(th)) specifies the gate voltage required to turn the MOSFET on. It requires a gate drive voltage within specified limits for optimal performance and reliability. Detailed electrical characteristics, including VDS, ID, RDS(on), and VGS(th), are available in the device datasheet. The device typically comes in a TO-220 or similar package suitable for heat dissipation. It requires a heatsink for higher current applications to maintain safe operating temperatures.

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3272 $50.7160
375+ $0.2685 $100.6875
580+ $0.2601 $150.8580
795+ $0.2517 $200.1015
1,030+ $0.2434 $250.7020
1,375+ $0.2182 $300.0250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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