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TK60D08J1

Part No TK60D08J1
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Switching Regulator Application
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1267760-TK60D08J1
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK60D08J1 CAD Model

Description

The TK60D08J1 is an N-channel power MOSFET from Toshiba Semiconductor and Storage, utilizing their latest generation process. This MOSFET is designed for high-efficiency power conversion applications, offering a good balance between on-resistance, gate charge, and switching speed. It's suitable for various applications requiring efficient and reliable power switching.

Applications:

  • DC-DC converters
  • AC-DC power supplies
  • Motor control circuits
  • Power management systems
  • Lighting applications (LED drivers)

Features:

  • Low on-resistance (RDS(on)): Minimizes conduction losses for high efficiency.
  • Low gate charge (Qg): Reduces switching losses and improves efficiency at higher frequencies.
  • High avalanche ruggedness: Provides enhanced reliability and robustness against voltage spikes.
  • Fast switching speed: Enables efficient operation in high-frequency circuits.
  • Pb-free plating; RoHS compliant: Meets environmental regulations.

Benefits:

  • Improved energy efficiency: Low RDS(on) and Qg contribute to reduced power losses, resulting in higher overall efficiency.
  • Increased power density: Allows for smaller and lighter power supply designs.
  • Enhanced reliability: High avalanche ruggedness improves device robustness and lifespan.
  • Simplified design: Optimized parameters simplify circuit design and reduce the need for complex compensation techniques.
  • Environmentally friendly: Lead-free plating and RoHS compliance minimize environmental impact.

Additional Details:

The TK60D08J1 typically comes in a TO-252 (DPAK) or TO-251 (IPA) package. Key specifications include a drain-source voltage (VDS) of 60V, a continuous drain current (ID) of up to 60A (depending on mounting and ambient temperature), and a low on-resistance (RDS(on)) at a gate-source voltage (VGS) of 10V. The gate threshold voltage (VGS(th)) is typically between 1V and 3V. The device is designed to operate over a temperature range of -55°C to +175°C. The fast switching speed allows for high-frequency operation. Proper thermal management is crucial for optimal performance, requiring a suitable heatsink to dissipate heat effectively. This device is a popular choice for designers seeking a balance of efficiency, reliability, and cost-effectiveness in power switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.6967 $58.4835
13+ $9.5969 $124.7597
19+ $9.2978 $176.6582
26+ $8.9975 $233.9350
34+ $8.6972 $295.7048
45+ $7.7974 $350.8830
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,700 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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