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SIR170DP-T1-RE3

Part No SIR170DP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 23.2A/95A PPAK  /  N-Channel 100 V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 23.2A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6195 pF @ 50 V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR170
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIR170DP-T1-RE3TR,SIR170DP-T1-RE3CT,SIR170DP-T1-RE3DKR
Standard Package 3,000
Win Source Part Number 1108732-SIR170DP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR170DP-T1-RE3 CAD Model

Description

The 1108732-SIR170DP-T1-RE3 is a MOSFET transistor designed for use in various applications such as DC-DC converters, power supplies, and motor control.

  • Drain to Source Voltage: 100 V
  • Continuous Drain Current: 23.2A (Ta), 95A (Tc)
  • FET Type: N-Channel
  • Maximum Rds On: 4.8mOhm @ 20A, 10V
  • Maximum Gate Charge: 140 nC @ 10 V
  • Mounting: SMD (SMT)
  • Package/Case: PowerPAK® SO-8
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)
  • Manufacturer: Vishay Siliconix

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.8557 $55.6710
70+ $1.5227 $106.5890
105+ $1.4751 $154.8855
145+ $1.4275 $206.9875
185+ $1.3799 $255.2815
245+ $1.2372 $303.1140
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Availability: 5,953 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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