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Same model may have multiple batches, images only for reference.
TK60P03M1,RQ(S Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK60P03M1,RQ(S

Part No TK60P03M1,RQ(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 60A DPAK-3
Datasheet
TK60P03M1,RQ(S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 500μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 2700pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 6.4 mOhm @ 30A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1107454-TK60P03M1,RQ(S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK60P03M1,RQ(S CAD Model

Description

The Toshiba Semiconductor and Storage component with Win Source Part Number 1107454-TK60P03M1,RQ(S is an N-Channel MOSFET with a Drain-Source Breakdown Voltage of 30V.

  • Continuous Drain Current @ 25°C: 60A (Ta)
  • Gate-Source Threshold Voltage: 2.3V @ 500μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 6.4 mOhm @ 30A, 10V
  • Supply and Demand Status: sufficient
  • Manufacturer: Toshiba Semiconductor and Storage

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