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TK62N60W,S1VF

Part No TK62N60W,S1VF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 61.8A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 61.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.7V @ 3.1mA
Gate Charge (Qg) (Maximum) @ Vgs 180nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6500pF @ 300V
Vgs (Maximum) ±30V
FET Feature Super Junction
Power Dissipation (Maximum) 400W (Tc)
Rds On (Maximum) @ Id, Vgs 40 mOhm @ 30.9A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 742587-TK62N60W,S1VF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK62N60W,S1VF CAD Model

Description

The TK62N60W,S1VF is a limited supply electronic component manufactured by Toshiba Semiconductor and Storage.

  • Series: DTMOSIV
  • Package: TO-247-3
  • Mounting style: Through hole
  • FET feature: Super junction
  • Current-continuous drain (Id) @ 25°C: 61.8A (Ta)
  • RoHS state: Requires verification
  • Manufacturer homepage: www.semicon.toshiba.co.jp/eng

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.4253 $68.5518
13+ $9.3740 $121.8620
20+ $9.0818 $181.6360
27+ $8.7884 $237.2868
34+ $8.4962 $288.8708
46+ $7.6172 $350.3912
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Availability: 11,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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