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TK65E10N1

Part No TK65E10N1
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 100V 148A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 148A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 81nC @ 10V
Max Input Capacitance 5400pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 192W (Tc)
Maximum Rds On at Id,Vgs 4.8 mOhm @ 32.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 212910-TK65E10N1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK65E10N1 CAD Model

Description

The Toshiba Semiconductor and Storage TK65E10N1 is a high-quality MOSFET that is designed to provide high performance and reliability.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Win Source Part Number: 212910-TK65E10N1
  • Operating Temperature: 150°C (TJ)
  • Maximum Power Dissipation: 192W (Tc)
  • Category: Discrete Semiconductor Products
  • Popularity Rating: Medium
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 4.8 mOhm @ 32.5A, 10V
  • Supply and Demand Status: Balanced
  • Performance: High-quality performance

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1650 $52.4250
105+ $0.9559 $100.3695
165+ $0.9261 $152.8065
225+ $0.8962 $201.6450
290+ $0.8663 $251.2270
390+ $0.7767 $302.9130
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,330 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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