The TK6A65D(STA4,Q,M) is a single N-Channel MOSFET designed for high-power applications.

• It has a drain to source voltage (Vdss) of: 650V
• and a continuous drain current (Id) of: 6A @ 25°C.
• The Rds On (Max) is: 1.11Ohm @ 3A and 10V, ensuring low power loss and high efficiency.
• The TK6A65D(STA4,Q,M) has a gate charge (Qg) of: 20nC @ 10V
• and an input capacitance (Ciss) of: 1050pF @ 25V, providing fast and efficient switching performance.
• It is: through-hole mountable and comes in a TO-220-3 Full Pack package.
• Operating @: a temperature range of 150°C, it can withstand high-temperature environments.
• The TK6A65D(STA4,Q,M) is: an active product from Toshiba Semiconductor and Storage, offering reliable and high-performance solutions for power electronics.