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Same model may have multiple batches, images only for reference.
TK6A80E Real Image
Same model may have multiple batches, images only for reference.

TK6A80E

Part No TK6A80E
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V TO220SIS
Datasheet
TK6A80E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 600μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 1.7 Ohm @ 3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 212917-TK6A80E
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK6A80E CAD Model

Description

This MOSFET technology-based component is designed for use in various applications, including power supplies, lighting, and motor control. It is an ideal choice for designers who want to create energy-efficient products.

  • Designed for: harsh environments
  • Rating: high-performance
  • Easy to: install and maintain

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5127 $51.2700
240+ $0.4207 $100.9680
370+ $0.4076 $150.8120
510+ $0.3944 $201.1440
660+ $0.3813 $251.6580
880+ $0.3418 $300.7840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 68,033 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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