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TK7A80W,S4X

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Part No	TK7A80W,S4X
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	PB-F POWER MOSFET TRANSISTOR TO-
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	950mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id	4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
Power Dissipation (Max)	35W (Tc)
Temperature Range - Operating	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Standard Package	50 pcs
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1099483-TK7A80W,S4X
Ultra Librarian 3D Model	Ultra Librarian TK7A80W,S4X CAD Model

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Description

The 1099483-TK7A80W,S4X is a high-voltage N-channel MOSFET designed for various electronic applications.

Series: DTMOSIV
Package: TO-220-3 Full Pack
Drain to Source Voltage (Vdss): 800 V
Continuous Drain Current (Id): 6.5A
Rds On (Max): 950mOhm @ 3.3A and 10V
Gate Charge (Qg): 13 nC @ 10V
Maximum Operating Temperature: 150°C
Applications: Power Supplies, Motor Control, and other high-voltage applications
Manufacturer: Toshiba Semiconductor and Storage

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