The TK80E08K3(S1SS2.Q) is an 80V, 80A N-channel Power MOSFET from Toshiba Semiconductor and Storage. It is designed for high-efficiency switching applications, offering a balance of low on-resistance and fast switching speeds. This MOSFET is suitable for use in DC-DC converters, motor control, and other power management circuits.

Applications

• DC-DC Converters
• Motor Control
• Power Management Circuits
• Load Switching
• Synchronous Rectification

Features

• Low On-Resistance (RDS(on)): Minimizes conduction losses, improving efficiency.
• High Drain Current (ID): Capable of handling up to 80A of continuous drain current.
• Fast Switching Speed: Reduces switching losses and enhances overall performance.
• Low Gate Charge (Qg): Simplifies gate drive requirements.
• Surface Mount Package: Facilitates automated assembly.

Benefits

• Improved Efficiency: Low RDS(on) and fast switching speeds lead to higher efficiency in power conversion.
• Enhanced Thermal Performance: Reduces heat generation and simplifies thermal management.
• Compact Design: Surface mount package allows for a smaller footprint in circuit designs.
• Simplified Circuit Design: Easy to implement in various power electronic circuits.
• High Reliability: Designed for robust and reliable operation in demanding applications.

Technical Specifications

The TK80E08K3(S1SS2.Q) features a drain-source voltage (VDS) of 80V, a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) of 80A. The RDS(on) is typically 6.8 mΩ at VGS = 10V. The gate charge (Qg) is typically 30 nC. It is available in a surface mount package. The operating junction temperature ranges from -55°C to +175°C.

This Power MOSFET is designed to provide efficient and reliable performance in a wide range of power switching applications. Its low on-resistance and fast switching speeds make it an excellent choice for demanding power management circuits.