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Same model may have multiple batches, images only for reference.
TK80S06K3L(T6L1,NQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK80S06K3L(T6L1,NQ

Part No TK80S06K3L(T6L1,NQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A DPAK-3
Datasheet
TK80S06K3L(T6L1,NQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 80A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 85nC @ 10V
Max Input Capacitance 4200pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 40A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK+
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1107468-TK80S06K3L(T6L1,NQ
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK80S06K3L(T6L1,NQ CAD Model

Description

The Toshiba Semiconductor and Storage TK80S06K3L(T6L1,NQ) MOSFET is a N-Channel polarity device.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 80A @ 25°C
  • Maximum Rds On at Id, Vgs: 5.5 mOhm @ 40A, 10V
  • Gate-Source Threshold Voltage: 3V @ 1mA
  • Maximum Gate Charge: 85nC @ 10V
  • Maximum Input Capacitance: 4200pF @ 10V
  • Power Dissipation: 100W (Tc)
  • Operating Temperature Range: 175°C (TJ)
  • Package: DPAK+, TO-252-3, DPak (2 Leads + Tab), SC-63.

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110+ $0.9291 $102.2010
170+ $0.9001 $153.0170
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300+ $0.8420 $252.6000
400+ $0.7549 $301.9600
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