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Same model may have multiple batches, images only for reference.
TK8A50DA(STA4,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK8A50DA(STA4,Q,M)

Part No TK8A50DA(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 7.5A TO-220SIS
Datasheet
TK8A50DA(STA4,Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 1.04 Ohm @ 3.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 1050568-TK8A50DA(STA4,Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK8A50DA(STA4,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a N-Channel polarity transistor with a Drain-Source Breakdown Voltage of 500V and Continuous Drain Current of 7.5A (Ta).

  • Maximum Rds On @ Id,Vgs: 1.04 Ohm @ 3.8A, 10V
  • Power Dissipation: 35W (Tc)
  • Gate-Source Threshold Voltage: 4.4V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Max Gate Charge: 16nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.4389 $62.6334
14+ $8.5655 $119.9170
21+ $8.2975 $174.2475
29+ $8.0307 $232.8903
38+ $7.7628 $294.9864
50+ $6.9600 $348.0000
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Availability: 12,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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