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Same model may have multiple batches, images only for reference.
TK8A60DA(STA4,Q,M) Real Image
Same model may have multiple batches, images only for reference.

TK8A60DA(STA4,Q,M)

Part No TK8A60DA(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.5A TO-220SIS / Trans MOSFET N-CH Si 600V 7.5A 3-Pin(3+Tab) TO-220SIS
Datasheet
TK8A60DA(STA4,Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSVII
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1050pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 45W (Tc)
Rds On (Maximum) @ Id, Vgs 1 Ohm @ 4A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220SIS
Package TO-220-3 Full Pack
Win Source Part Number 777952-TK8A60DA(STA4,Q,M)
Popularity Medium
Supply and Demand Status Limited
Family Name TK8A60DA
Introduction Date November 20, 2008
ECCN EAR99
Country of Origin China, Malaysia
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian TK8A60DA(STA4,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage TK8A60DA(STA4,Q,M) is a medium popularity electronic component with limited supply and demand status.

  • Category: Discrete Semiconductor Products
  • Packaging: Tube
  • Technology: MOSFET
  • Drain Source Voltage: 600V
  • Power Dissipation: 45W (Tc)
  • Maximum Vgs: ±30V

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Quantity Unit Price Ext. Price
22+ $2.7374 $60.2228
52+ $2.2453 $116.7556
80+ $2.1760 $174.0800
110+ $2.1056 $231.6160
142+ $2.0351 $288.9842
190+ $1.8249 $346.7310
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Availability: 7,000 pieces
MOQ: 22 pcs
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