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Same model may have multiple batches, images only for reference.
TK8A65D(STA4,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK8A65D(STA4,Q,M)

Part No TK8A65D(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 5A TO-220SIS
Datasheet
TK8A65D(STA4,Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 840 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 1050571-TK8A65D(STA4,Q,M)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK8A65D(STA4,Q,M) CAD Model

Description

The TK8A65D(STA4,Q,M) is an N-channel MOSFET from Toshiba Semiconductor and Storage.

  • Mounting Type: Through-Hole
  • Package: TO-220SIS
  • Dimension: TO-220-3 Full Pack
  • Operating Temperature: 150°C (TJ)
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 8A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Input Capacitance: 1350pF @ 25V
  • Maximum Rds On @ Id,Vgs: 840 mOhm @ 4A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4733 $52.0630
230+ $0.4433 $101.9590
355+ $0.4283 $152.0465
505+ $0.3984 $201.1920
655+ $0.3834 $251.1270
815+ $0.3684 $300.2460
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Availability: 30,000 pieces
MOQ: 110 pcs
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