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Same model may have multiple batches, images only for reference.
TK9J90E,S1E
Same model may have multiple batches, images only for reference.

TK9J90E,S1E

Part No TK9J90E,S1E
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 9A TO3P / N-Channel 900 V 9A (Ta) 250W (Tc) Through Hole TO-3P(N)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 9A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-3P(N)
Case / Package TO-3P-3, SC-65-3
Base Product Number TK9J90
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number TK9J90E,S1E(S,TK9J90ES1E
Standard Package 25
Win Source Part Number 1325318-TK9J90E,S1E
Ultra Librarian 3D Model Ultra Librarian TK9J90E,S1E CAD Model

Description

The Toshiba Semiconductor and Storage 1325318-TK9J90E,S1E is an N-channel MOSFET transistor that belongs to the discrete semiconductor products category.

  • Vdss: 900V
  • Id: 9A
  • Rds On (Max): 1.3Ohm @ 4.5A, 10V
  • Qg (Max): 46 nC @ 10V
  • Case/Package: TO-3P(N)
  • ROHS3 Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9545 $52.4975
115+ $0.8941 $102.8215
175+ $0.8639 $151.1825
250+ $0.8035 $200.8750
325+ $0.7733 $251.3225
405+ $0.7431 $300.9555
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,850 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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