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TLP250(F)(TP1.F)

Part No TLP250(F)(TP1.F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Misc Products
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Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 840532-TLP250(F)(TP1.F)
Ultra Librarian 3D Model Ultra Librarian TLP250(F)(TP1.F) CAD Model

Description

The TLP250(F)(TP1.F) is a gate driver optocoupler manufactured by Toshiba Semiconductor and Storage. It's designed for driving IGBTs and MOSFETs in various power electronics applications. The device integrates a GaAlAs infrared light-emitting diode (LED) and a high-gain, high-speed photodetector IC, providing electrical isolation between the input and output stages.

Applications:

  • IGBT/MOSFET gate drivers
  • Inverter circuits
  • AC and DC motor drives
  • Switching power supplies
  • Uninterruptible power supplies (UPS)
  • Industrial automation equipment

Features:

  • High peak output current: ±2.5 A (typical)
  • High-speed switching: 0.5 μs propagation delay (maximum)
  • High common-mode transient immunity: ±10 kV/μs (minimum)
  • Wide operating temperature range: -40°C to 100°C
  • Under voltage lockout (UVLO) protection
  • Creepage distance: 8.0 mm (minimum)
  • Clearance distance: 8.0 mm (minimum)
  • Isolation voltage: 3750 Vrms (minimum)

Benefits:

  • Improved system efficiency: High peak output current enables efficient switching of IGBTs and MOSFETs, reducing power losses.
  • Enhanced system reliability: The high common-mode transient immunity prevents spurious switching caused by noise.
  • Simplified system design: Under-voltage lockout protection prevents IGBT/MOSFET damage during low-voltage conditions.
  • Increased safety: High isolation voltage provides electrical isolation between the control and power circuits, improving safety.
  • Suitable for harsh environments: Wide operating temperature range makes it suitable for use in industrial environments.
  • Meets safety standards: UL, cUL, and VDE certifications ensure compliance with safety regulations.

Additional Details:

The TLP250(F)(TP1.F) is designed with an internal shield that improves common-mode noise rejection. The device provides galvanic isolation between the control circuit and the high-voltage power circuit. The fast switching speed makes it suitable for high-frequency applications. The under-voltage lockout (UVLO) feature protects the driven IGBT or MOSFET from damage by preventing operation when the supply voltage is insufficient. Available in an 8-pin DIP package or a surface-mount SO8 package.

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