The TMM2016BP-15 is a high-speed static RAM (SRAM) manufactured by Toshiba Semiconductor and Storage. This memory chip is organized as 131,072 words by 8 bits (1 Mbit), offering a combination of speed, capacity, and relatively low power consumption.

Applications

• Cache memory in embedded processors and microcontrollers
• Buffer memory in high-speed data acquisition and processing systems
• Control memory for industrial automation and robotics
• Working memory in digital signal processing (DSP) applications
• Temporary data storage in network devices

Features

• Organization: 131,072 words x 8 bits (1 Mbit)
• Access Time: 15 ns
• Supply Voltage: 5V
• Operating Current: Low operating current for power efficiency
• Standby Current: Minimal standby current for battery-backed applications
• Package: DIP or SOIC (Refer to the datasheet for the specific package)
• Operating Temperature: -40°C to +85°C (Industrial temperature range)

Benefits

• Fast Access Time: The 15 ns access time allows for quick retrieval of data, enhancing system performance.
• Low Power Consumption: Reduced power consumption increases battery life in portable systems.
• Sufficient Capacity: 1 Mbit storage space provides ample room for temporary data and program storage.
• Simple Interface: The standard SRAM interface facilitates easy integration into existing hardware.
• Reliable Performance: Designed to operate reliably in harsh industrial environments.

Additional Details

The TMM2016BP-15 SRAM offers a balance of speed and power consumption, making it suitable for embedded systems and other applications where performance and energy efficiency are critical. The package type (DIP or SOIC) will vary; refer to the official Toshiba datasheet for details regarding package dimensions, pinout, and other specifications.

Key Specifications:

• Memory Size: 1 Mbit
• Organization: 131,072 words x 8 bits
• Access Time: 15 ns
• Supply Voltage: 5 V ± 10%
• Operating Temperature: -40°C to +85°C
• Data Retention Voltage: Typically 2 V