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Same model may have multiple batches, images only for reference.
TPC6011(TE85L,F,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC6011(TE85L,F,M)

Part No TPC6011(TE85L,F,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6A VS6
Datasheet
TPC6011(TE85L,F,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 640pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-6 (2.9x2.8)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1111088-TPC6011(TE85L,F,M)
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Automotive, Power Management
Ultra Librarian 3D Model Ultra Librarian TPC6011(TE85L,F,M) CAD Model

Description

The Toshiba Semiconductor and Storage 1111088-TPC6011(TE85L,F,M) is a discrete semiconductor product.

  • Popularity: Medium
  • Supply and Demand Status: Balance
  • Applications: Industrial, automotive, and power management
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 6A

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