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TPC6109-H

Part No TPC6109-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 5A VS-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.2V @ 200μA
Max Gate Charge 12.3nC @ 10V
Max Input Capacitance 490pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 59 mOhm @ 2.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-6 (2.9x2.8)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 101467-TPC6109-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC6109-H CAD Model

Description

The TPC6109-H is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Popularity: medium
  • Availability: available from Win Source
  • Supply and Demand Status: balanced
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 5A

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Pricing & Ordering

Quantity Unit Price Ext. Price
235+ $0.2506 $58.8910
565+ $0.2056 $116.1640
870+ $0.1998 $173.8260
1,200+ $0.1929 $231.4800
1,545+ $0.1871 $289.0695
2,070+ $0.1675 $346.7250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 119,200 pieces
MOQ: 235 pcs
Order Increment : 1 pcs
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