The TPC8004 is an N-channel MOS field-effect transistor (MOSFET) designed and manufactured by Toshiba Semiconductor and Storage. This MOSFET is engineered for efficient power management applications, offering low on-resistance and high-speed switching capabilities. It's suitable for use in a variety of circuits, including DC-DC converters, load switches, and power supplies.

Applications

• DC-DC converters
• Load switching
• Power supplies
• Motor control
• Backlight inverters

Features

• Low drain-source on-resistance (RDS(ON))
• High-speed switching
• Surface mount package
• Logic level drive compatibility
• Pb-free plating

Benefits

• Improved energy efficiency
• Reduced power dissipation
• Compact design
• Simplified gate drive circuitry
• Environmentally friendly

Detailed Specs

The TPC8004 features a low drain-source on-resistance (RDS(ON)) to minimize conduction losses and enhance power efficiency. It has a typical RDS(ON) value of around 18 mΩ at a gate-source voltage (VGS) of 10V. The MOSFET is rated for a continuous drain current (ID) of approximately 10A, which makes it appropriate for a wide range of power applications. The gate threshold voltage (Vth) is designed to be logic-level compatible, simplifying the gate drive requirements and allowing for direct interfacing with microcontrollers and other digital logic devices. The maximum drain-source voltage (VDS) is 30V. The fast switching speed minimizes switching losses, thereby further improving efficiency, especially in high-frequency applications. The TPC8004 is packaged in a small surface mount format, facilitating compact design and automated assembly. The Pb-free plating helps comply with environmental regulations. The TPC8004 is a reliable and efficient MOSFET choice for designers looking to optimize power management circuits. Its performance characteristics and compact size make it an ideal solution for portable devices, power supplies, and other applications where power efficiency and space are critical considerations.