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Same model may have multiple batches, images only for reference.
TPC8065-H Real Image
Same model may have multiple batches, images only for reference.

TPC8065-H

Part No TPC8065-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13A 8SOP
Datasheet
TPC8065-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 200μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1350pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 11.6 mOhm @ 6.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 213269-TPC8065-H
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPC8065-H CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-performance N-Channel power MOSFET designed for use in various applications such as power supplies, DC-DC converters, and motor control circuits.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 13A
  • Gate-Source Threshold Voltage: 2.3V @ 200μA
  • Maximum Gate Charge: 20nC @ 10V
  • Package: 8-SOP package
  • Size: 8-SOIC (0.154", 3.90mm Width)
  • Temperature Range: 150°C (TJ)
  • Packaging: reel packaging

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3806 $58.9930
370+ $0.3123 $115.5510
575+ $0.3026 $173.9950
790+ $0.2928 $231.3120
1,020+ $0.2831 $288.7620
1,370+ $0.2538 $347.7060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,000 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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